Gate-All-Around FET (GAA FET)
As the fin width in a finFET approaches 5nm, channel width variations could cause undesirable variability and mobility loss. One promising and futuristic transistor candidate - gate-all-around FET - could circumvent the problem. Considered the ultimate CMOS device in terms of electrostatics, gate-all-around is a device in which a gate is placed on all four...
https://semiengineering.com/knowledge_centers/integrated-circuit/transistors/3d/gate-all-around-fet/